Synthesis and characterization of SmNiO3 thin films
Identifieur interne : 000249 ( France/Analysis ); précédent : 000248; suivant : 000250Synthesis and characterization of SmNiO3 thin films
Auteurs : N. Ihzaz [France, Tunisie] ; S. Pignard [France] ; J. Kreisel [France] ; H. Vincent [France] ; J. Marcus [France] ; J. Dhahri [Tunisie] ; M. Oumezzine [Tunisie]Source :
- physica status solidi (c) [ 1610-1634 ] ; 2004-05.
English descriptors
Abstract
Thin films of SmNiO3 were grown on LaAlO3 (012) substrates using the injection‐MOCVD process, a method which has been in the past successfully applied to the growth of high‐quality epitaxial oxide thin films. Our investigation of as‐deposited films by X‐ray diffraction allows concluding on the presence of a pure SmNiO3 phase with an epitaxial growth on the LaAlO3 substrate. It is interesting to note, that the growth of SmNiO3 films on LaAlO3 (012) leads to a non‐negligible in‐plane compressive stress near the interface, which possibly explains the stabilization of the SmNiO3 phase, otherwise difficult to obtain. Further to the latter results we present and discuss temperature‐dependent measurements of the electric properties: an electrical transition from insulting to metallic state is observed at 520 K with a minimum resistivity of 1.3 mΩ.cm. Finally, in order to further investigate the structure of the obtained films, we have performed a first‐time Raman scattering study of SmNiO3, the results are discussed in comparison to literature results obtained on NdNiO3. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Url:
DOI: 10.1002/pssc.200304422
Affiliations:
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<front><div type="abstract" xml:lang="en">Thin films of SmNiO3 were grown on LaAlO3 (012) substrates using the injection‐MOCVD process, a method which has been in the past successfully applied to the growth of high‐quality epitaxial oxide thin films. Our investigation of as‐deposited films by X‐ray diffraction allows concluding on the presence of a pure SmNiO3 phase with an epitaxial growth on the LaAlO3 substrate. It is interesting to note, that the growth of SmNiO3 films on LaAlO3 (012) leads to a non‐negligible in‐plane compressive stress near the interface, which possibly explains the stabilization of the SmNiO3 phase, otherwise difficult to obtain. Further to the latter results we present and discuss temperature‐dependent measurements of the electric properties: an electrical transition from insulting to metallic state is observed at 520 K with a minimum resistivity of 1.3 mΩ.cm. Finally, in order to further investigate the structure of the obtained films, we have performed a first‐time Raman scattering study of SmNiO3, the results are discussed in comparison to literature results obtained on NdNiO3. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</div>
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